The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Mar. 27, 2009
Yiran Chen, Eden Prairie, MN (US);
Hai LI, Eden Praire, MN (US);
Wengzhong Zhu, Chanhassen, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Ran Wang, Bloomington, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Yiran Chen, Eden Prairie, MN (US);
Hai Li, Eden Praire, MN (US);
Wengzhong Zhu, Chanhassen, MN (US);
Xiaobin Wang, Chanhassen, MN (US);
Ran Wang, Bloomington, MN (US);
Hongyue Liu, Maple Grove, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
A method of writing to a resistive sense memory unit includes applying a first voltage across a resistive sense memory cell and a semiconductor transistor to write a first data state to the resistive sense memory cell. The first voltage forms a first write current for a first time duration through the resistive sense memory cell in a first direction. Then the method includes applying a second voltage across the resistive sense memory cell and the transistor to write a second data state to the resistive sense memory cell. The second voltage forms a second write current for a second duration through the resistive sense memory cell in a second direction. The second direction opposes the first direction, the first voltage has a different value than the second voltage, and the first duration is substantially the same as the second duration.