The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Sep. 26, 2008
Applicants:

Fabrizio Cortigiani, Padua, IT;

Franco Mignoli, Verona, IT;

Gianluca Ragonesi, Padua, IT;

Silvia Solda, Padua, IT;

Inventors:

Fabrizio Cortigiani, Padua, IT;

Franco Mignoli, Verona, IT;

Gianluca Ragonesi, Padua, IT;

Silvia Solda, Padua, IT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.


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