The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 05, 2007
Applicant:
Taiwa Okanobu, Tokyo, JP;
Inventor:
Taiwa Okanobu, Tokyo, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract
A first terminal Tis connected to the drain (or the source) of a MOS-FET (Q), whose back gate is separated, through a capacitor C. The MOS-FET (Q) is connected at the source (or the drain) thereof to a second terminal T. The back gate is connected to the source (or the drain). A control voltage VG is supplied to the gate of the MOS-FET (Q), and a voltage having a polarity reversed from that of this control voltage VG is supplied to the drain through a resistance element R