The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Nov. 05, 2009
Applicants:
Bhavesh G. Bhakta, Richardson, TX (US);
Mark W. Morgan, Allen, TX (US);
Inventors:
Bhavesh G. Bhakta, Richardson, TX (US);
Mark W. Morgan, Allen, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Traditionally, complementary metal oxide semiconductor (CMOS) and bipolar transistors have been separately employed in low voltage differential signal (LVDS) drivers. Here, a hybridized LVDS driver is provided with an input stage that uses CMOS transistors and output stages that use bipolar transistors. As a result of this hybridization, the LVDS driver has superior functional characteristics compared to conventional LVDS drivers as well as being able to function with a supply range between about 1.8V and 3.3V.