The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
May. 07, 2004
Renato Andrea Danilo Turchetta, Abingdon, GB;
Giulio Enrico Villani, Oxford, GB;
Mark Lyndon Prydderch, Farringdon, GB;
Renato Andrea Danilo Turchetta, Abingdon, GB;
Giulio Enrico Villani, Oxford, GB;
Mark Lyndon Prydderch, Farringdon, GB;
The Science and Technology Facilities Council, Oxfordshire, GB;
Abstract
An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (), an epi layer (), a p+ well () and n+ wells () which are separated from the p+ well () by the epi layer (). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region () beneath the p+ well () which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well (). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.