The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Mar. 26, 2009
Applicant:
Mariko Takayanagi, Clifton Park, NY (US);
Inventor:
Mariko Takayanagi, Clifton Park, NY (US);
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed are methods of making an integrated circuit with multiple thickness and/or multiple composition high-K gate dielectric layers and integrated circuits containing multiple thickness and/or multiple composition high-K gate dielectrics. The methods involve forming a layer of high-K atoms over a conventional gate dielectric and heating the layer of high-K atoms to form a high-K gate dielectric layer. Methods of suppressing gate leakage current while mitigating mobility degradation are also described.