The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jul. 25, 2008
Tae-sang Kim, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Tae-sang Kim, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.