The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Sep. 18, 2008
Masahiro Koike, Yokohama, JP;
Yuuichiro Mitani, Kanagawa-Ken, JP;
Yasushi Nakasaki, Yokohama, JP;
Masato Koyama, Kanagawa-Ken, JP;
Masahiro Koike, Yokohama, JP;
Yuuichiro Mitani, Kanagawa-Ken, JP;
Yasushi Nakasaki, Yokohama, JP;
Masato Koyama, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.