The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Dec. 22, 2008
Huaqiang Wu, Burlingame, CA (US);
Hiro Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Arturo Ruiz, San Jose, CA (US);
Jihwan Choi, San Mateo, CA (US);
Huaqiang Wu, Burlingame, CA (US);
Hiro Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Arturo Ruiz, San Jose, CA (US);
Jihwan Choi, San Mateo, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The memory cell contains a pair of first bit lines and a pair of second bit lines. The first and second bit lines can be formed by an implant process using first and second spacers that have different lateral lengths from each other. The spacers can be used to offset the implants, thereby controlling the lateral lengths of the bit lines.