The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 15, 2009
Byung-jun Park, Suwon-si, KR;
Byung-jun Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.