The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Nov. 17, 2006
Masato Taki, Aichi-ken, JP;
Masahiro Kawakami, Toyota, JP;
Kiyoharu Hayakawa, Obu, JP;
Masayasu Ishiko, Nagoya, JP;
Masato Taki, Aichi-ken, JP;
Masahiro Kawakami, Toyota, JP;
Kiyoharu Hayakawa, Obu, JP;
Masayasu Ishiko, Nagoya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A diodecomprises an SOI substrate in which are stacked a semiconductor substrate, an insulator film, and a semiconductor layer. A bottom semiconductor region, an intermediate semiconductor region, and a surface semiconductor regionare formed in the semiconductor layer. The bottom semiconductor regionincludes a high concentration of n-type impurity. The intermediate semiconductor regionincludes a low concentration of n-type impurity. The surface semiconductor regionincludes p-type impurity.