The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Apr. 13, 2009
Applicants:

Masato Hiramatsu, Yokohama, JP;

Hiroyuki Ogawa, Yokohama, JP;

Masakiyo Matsumura, Yokohama, JP;

Inventors:

Masato Hiramatsu, Yokohama, JP;

Hiroyuki Ogawa, Yokohama, JP;

Masakiyo Matsumura, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/20 (2006.01); H01L 21/268 (2006.01); H01L 21/00 (2006.01); H01L 21/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.


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