The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Dec. 19, 2008
Lisa Z. Zhang, Gilbert, AZ (US);
Lisa H. Karlin, Chandler, AZ (US);
Ruben B. Montez, Cedar Park, TX (US);
Woo Tae Park, Chandler, AZ (US);
Lisa Z. Zhang, Gilbert, AZ (US);
Lisa H. Karlin, Chandler, AZ (US);
Ruben B. Montez, Cedar Park, TX (US);
Woo Tae Park, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A microelectromechanical systems (MEMS) device () includes a polysilicon structural layer () having movable microstructures () formed therein and suspended above a substrate (). Isolation trenches () extend through the layer () such that the microstructures () are laterally anchored to the isolation trenches (). A sacrificial layer () is formed overlying the substrate (), and the structural layer () is formed overlying the sacrificial layer (). The isolation trenches () are formed by etching through the polysilicon structural layer () and depositing a nitride (), such as silicon-rich nitride, in the trenches (). The microstructures () are then formed in the structural layer (), and electrical connections () are formed over the isolation trenches (). The sacrificial layer () is subsequently removed to form the MEMS device () having the isolated microstructures () spaced apart from the substrate ().