The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jun. 22, 2006
Applicants:
Hong-sick Park, Suwon-si, KR;
Shi-yul Kim, Yongin-si, KR;
Jong-hyun Choung, Suwon-si, KR;
Won-suk Shin, Yongin-si, KR;
Inventors:
Hong-sick Park, Suwon-si, KR;
Shi-yul Kim, Yongin-si, KR;
Jong-hyun Choung, Suwon-si, KR;
Won-suk Shin, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
An etchant, a method for fabricating a multi-layered interconnection line using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant for the multi-layered line comprised of molybdenum/copper/molybdenum nitride illustratively includes 10-20 wt % hydrogen peroxide, 1-5 wt % organic acid, a 0.1-1 wt % triazole-based compound, a 0.01-0.5 wt % fluoride compound, and deionized water as the remainder.