The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Sep. 29, 2008
Applicants:
Masaomi Yamaguchi, Kawasaki, JP;
Yasuyoshi Mishima, Ebina, JP;
Inventors:
Masaomi Yamaguchi, Kawasaki, JP;
Yasuyoshi Mishima, Ebina, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method of manufacturing a semiconductor device comprises; forming an HfSiO filmon a silicon substrate; exposing the HfSiO filmto NHgas to thereby form an HfSiON film; forming an HfSiO filmon the HfSiON film; adhering Al to the surface of the HfSiO filmto thereby form an Al adhered layeron the surface of the HfSiO film; and forming a polysilicon filmon the HfSiO filmwith the Al adhered layerformed on the surface.