The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Nov. 17, 2006
Tetsuya Nakai, Tokyo, JP;
Tetsuya Nakai, Tokyo, JP;
Sumco Corporation, Toyko, JP;
Abstract
A substrate surface serving as an SOI region and a substrate surface serving as a bulk region are made to form the same plane easily and highly accurately, a thickness of a buried oxide film is made uniform, and the buried oxide film is also prevented from being exposed on the substrate surface. After partially forming a mask oxide film () on a surface of a silicon substrate (), an oxygen ions () are implanted into the surface of the substrate through this mask oxide film, and the substrate is further subjected to annealing treatment to form a buried oxide film () inside the substrate. Between the step of forming the mask oxide film and the step of implanting the oxygen ions, a recess portion () with a predetermined depth deeper than a substrate surface () serving as the bulk region where the mask oxide film has been formed is formed in a substrate surface () serving as the SOI region where the mask oxide film is not formed.