The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Apr. 24, 2007
Jaeun Yoo, Gyunggi-Do, KR;
Hyung Soo Ahn, Busan, KR;
Min Yang, Busan, KR;
Masayoshi Koike, Gyunggi-Do, KR;
Jaeun Yoo, Gyunggi-Do, KR;
Hyung Soo Ahn, Busan, KR;
Min Yang, Busan, KR;
Masayoshi Koike, Gyunggi-Do, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.