The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7943471 B1

PDF
Full Text
Expired
Date of Patent:
May. 17, 2011

Filed:

May. 15, 2006
Applicants:

James F. Buller, Austin, TX (US);

Jian Chen, Austin, TX (US);

Inventors:

James F. Buller, Austin, TX (US);

Jian Chen, Austin, TX (US);

Assignee:

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second conductive contact that is conductively coupled to the cathode.


Find Patent Forward Citations

Buller, James. (2011). Diode with asymmetric silicon germanium anode (U.S. Patent No. 7943471). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7943471

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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