The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Oct. 18, 2009
Chan-chang Liao, Taipei County, TW;
Hsien-kun Chiu, Taoyuan County, TW;
Wei-pang Yen, Taoyuan County, TW;
Chao-huan Hsu, Taoyuan County, TW;
Kun-yuan Huang, Taipei, TW;
Chan-Chang Liao, Taipei County, TW;
Hsien-Kun Chiu, Taoyuan County, TW;
Wei-Pang Yen, Taoyuan County, TW;
Chao-Huan Hsu, Taoyuan County, TW;
Kun-Yuan Huang, Taipei, TW;
Chunghwa Picture Tubes, Ltd., Bade, Taoyuan, TW;
Abstract
A method of forming a thin-film transistor array substrate is provided. A first mask is used to define a source, a drain and a channel on a substrate. A dielectric layer is formed to cover the source, the drain, the channel and the substrate. A second mask is used to define a patterned photoresist and the dielectric layer. A transparent conductive layer is formed to cover the patterned photoresist and the substrate. A lift-off process is performed to remove the patterned photoresist and a portion of the transparent conductive layer disposed on the patterned photoresist. A third mask is used to define a gate disposed on the dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile