The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Aug. 28, 2007
Applicants:
Pierre Jean Ribeyron, Saint Ismier, FR;
Sébastien Dubois, Grenoble, FR;
Nicolas Enjalbert, Les Avenirs, FR;
Inventors:
Pierre Jean Ribeyron, Saint Ismier, FR;
Sébastien Dubois, Grenoble, FR;
Nicolas Enjalbert, Les Avenirs, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 27/14 (2006.01); H01L 31/0232 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of: