The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Aug. 28, 2007
Maximilian Scherff, Hagen, DE;
Wolfgang Rainer Fahrner, Hagen, DE;
Maximilian Scherff, Hagen, DE;
Wolfgang Rainer Fahrner, Hagen, DE;
Q-Cells SE, Bitterfeld-Wolfen, DE;
Abstract
Disclosed is a novel method for creating local contacts in solar cells. In the method, a surface passivation that has been applied to a semiconductor substrate is locally etched away using a plasma process with the help of a thin stretched, elastic foil. If necessary, deep doping gradients are then locally created at the same points by means of a hydrogen plasma treatment with the help of thermal donors so as to increase the diffusion length of the charge carriers in the direction of the contacts. Finally, local heterostructure contacts are applied through the same mask openings. The contacts are characterized by a much lower saturation current than common diffused contacts and are therefore particularly suitable for high-performance solar cells.