The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Mar. 07, 2007
Applicants:

Jae-hee Cho, Yongin-si, KR;

Cheol-soo Sone, Yongin-si, KR;

Dong-yu Kim, Gwangju-si, KR;

Hyun-gi Hong, Gwangju-si, KR;

Seok-soon Kim, Gwangju-si, KR;

Inventors:

Jae-hee Cho, Yongin-si, KR;

Cheol-soo Sone, Yongin-si, KR;

Dong-yu Kim, Gwangju-si, KR;

Hyun-gi Hong, Gwangju-si, KR;

Seok-soon Kim, Gwangju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.


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