The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Sep. 23, 2008
Applicants:

Yoshitaka Sasaki, Santa Clara, CA (US);

Hiroyuki Ito, Milpitas, CA (US);

Takehiro Kamigama, Shatin, CN;

Tatsushi Shimizu, Hong Kong, CN;

Hironori Araki, Milpitas, CA (US);

Shigeki Tanemura, Santa Clara, CA (US);

Kazuo Ishizaki, Milpitas, CA (US);

Inventors:

Yoshitaka Sasaki, Santa Clara, CA (US);

Hiroyuki Ito, Milpitas, CA (US);

Takehiro Kamigama, Shatin, CN;

Tatsushi Shimizu, Hong Kong, CN;

Hironori Araki, Milpitas, CA (US);

Shigeki Tanemura, Santa Clara, CA (US);

Kazuo Ishizaki, Milpitas, CA (US);

Assignees:

Headway Technologies, Inc., Milpitas, CA (US);

SAE Magnetics (H.K.) Ltd., Hong Kong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a thin-film magnetic head structure comprises the steps of preparing an insulating layer; forming a first resist layerprovided with a first slit patterncorresponding to a very narrow groove part and a second slit patterncorresponding to a temporary groove part integrally extending from the very narrow groove part along outer edges of a main depression onto the insulating layer; etching the insulating layerwhile using the first resist layeras a mask; eliminating the first resist layer; forming a second resist layer having an opening pattern corresponding to the main depression onto the insulating layer; and etching the insulating layerwhile using the second resist layer as a mask.


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