The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Nov. 06, 2006
Applicants:
Kenjyu Shimogawa, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Inventors:
Kenjyu Shimogawa, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The semiconductor integrated circuit device includes a voltage control circuit that generates a control voltage for deactivating a field effect transistor by a gate voltage. The voltage control circuit controls a voltage so as to substantially minimize the leakage current which flows when the field effect transistor is inactive with respect to a device temperature.
Shimogawa, Kenjyu. (2011). Semiconductor integrated circuit device minimizing leakage current (U.S. Patent No. 7940577). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7940577
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile