The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Dec. 19, 2007
Applicants:

O Seo Park, Hopewell Junction, NY (US);

Sun-oo Kim, Hopewell Junction, NY (US);

Klaus Herold, Poughquag, NY (US);

Inventors:

O Seo Park, Hopewell Junction, NY (US);

Sun-Oo Kim, Hopewell Junction, NY (US);

Klaus Herold, Poughquag, NY (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor devices, methods of manufacturing thereof, lithography masks, and methods of designing lithography masks are disclosed. In one embodiment, a semiconductor device includes a plurality of first features disposed in a first material layer. At least one second feature is disposed in a second material layer, the at least one second feature being disposed over and coupled to the plurality of first features. The at least one second feature includes at least one void disposed between at least two of the plurality of first features.


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