The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Nov. 06, 2009
Applicants:

Dinh Dang, Essex Junction, VT (US);

Thai Doan, Burlington, VT (US);

Jessica Anne Levy, Milton, VT (US);

Max Gerald Levy, Essex Junction, VT (US);

Alan Frederick Norris, Fairfax, VT (US);

James Albert Slinkman, Montpelier, VT (US);

Inventors:

Dinh Dang, Essex Junction, VT (US);

Thai Doan, Burlington, VT (US);

Jessica Anne Levy, Milton, VT (US);

Max Gerald Levy, Essex Junction, VT (US);

Alan Frederick Norris, Fairfax, VT (US);

James Albert Slinkman, Montpelier, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.


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