The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Jun. 03, 2008
Applicant:
Tadaaki Yamauchi, Tokyo, JP;
Inventor:
Tadaaki Yamauchi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device, a first transistor of an SOI structure has a source region, a drain region, a body region positioned between the source region and the drain region, and a gate electrode positioned above the body region. A first capacitor of the SOI structure has a first terminal electrically connected to a gate electrode of the first transistor, and a second terminal. The semiconductor device stores data in a nonvolatile manner in accordance with carriers accumulated in a first node electrically connecting the gate electrode of the first transistor and the first terminal of the first capacitor.