The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Sep. 22, 2006
Philippe Meunier-beillard, Kortenberg, BE;
Raymond James Duffy, Leuven, BE;
Prabhat Agarwal, Brussels, BE;
Godfridus Adrianus Maria Hurkx, Best, NL;
Philippe Meunier-Beillard, Kortenberg, BE;
Raymond James Duffy, Leuven, BE;
Prabhat Agarwal, Brussels, BE;
Godfridus Adrianus Maria Hurkx, Best, NL;
NXP, B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region which are respectively of the N-type conductivity, the P-type conductivity and the N-type conductivity by the provision of suitable doping atoms, wherein the base region comprises a mixed crystal of silicon and germanium, the base region is separated from the emitter region by an intermediate region of silicon having a doping concentration which is lower than the doping concentration of the emitter region and with a thickness smaller than the thickness of the emitter region, and the emitter region comprises a sub-region comprising a mixed crystal of silicon and germanium which is positioned at the side of emitter region remote from the intermediate region.