The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Nov. 28, 2006
Yukio Shakuda, Kyoto, JP;
Yukio Shakuda, Kyoto, JP;
Rohm Co., Ltd., Kyoto-shi, JP;
Abstract
There is provided a nitride semiconductor light emitting device having high internal quantum efficiency by accelerating recombination radiation while employing a multiple quantum well structure in which each of well layers has a relatively large thickness. The nitride semiconductor light emitting device is provided with a nitride semiconductor lamination portion () provided on a substrate (). The nitride semiconductor lamination portion () includes at least an active layer () in which a light emitting portion is formed. And the active layer is constituted with a multiple quantum well structure formed by laminating well layers () made of InGaN (0<x≦1), and barrier layers () made of AlInGaN (0≦y<1, 0≦z<1, 0≦y+z<1, z<x) alternately. In addition, one of the well layers is divided at least into a first well layer () and a second well layer () by a thin film barrier layer () made of AlInGaN (0≦v<1, 0≦w<1, 0≦v+w<1, w<x), and the thin film barrier layer is formed so as to have a thickness of one atomic layer or more and 20 Angstroms or less.