The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Dec. 30, 2008
Applicants:

Jinwook Lee, San Jose, CA (US);

Kuo-wei Chang, Cupertino, CA (US);

Jason S. Reid, San Jose, CA (US);

Wim Y. Deweerd, San Jose, CA (US);

Aleshandre M. Diaz, San Mateo, CA (US);

Inventors:

Jinwook Lee, San Jose, CA (US);

Kuo-wei Chang, Cupertino, CA (US);

Jason S. Reid, San Jose, CA (US);

Wim Y. Deweerd, San Jose, CA (US);

Aleshandre M. Diaz, San Mateo, CA (US);

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.


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