The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Feb. 26, 2009
Masataka Kano, Tokyo-to, JP;
Kazuhito Tsukagoshi, Saitama, JP;
Takeo Minari, Saitama, JP;
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Riken, Wako-shi, Saitama, JP;
Abstract
A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics. The method includes: forming a hydrophobic/hydrophilic pattern substrate, in which a hydrophobic/hydrophilic pattern substrate is formed by using a hydrophobic substrate and by forming the hydrophilic region in pattern on the hydrophobic surface; forming a lyophilic functional layer, in which a lyophilic functional layer, made of an insulating functional material having the predetermined characteristics and having higher lyophilic properties to an organic solvent than that of the hydrophobic region, is formed on the hydrophilic region; forming an organic semiconductor layer, in which an organic semiconductor layer is formed on the lyophilic functional layer by selectively coating a coating solution for forming an organic semiconductor layer, which has an organic semiconductor material and an organic solvent, to the lyophilic functional layer.