The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Apr. 04, 2008
Applicants:
Weize Xiong, Plano, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Inventors:
Weize Xiong, Plano, TX (US);
Cloves Rinn Cleavelin, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract
Different performance MOSFET Fully Depleted devices can be achieved on a single chip by varying the Vt through ion implantation. The integration of multiple Vt can be achieved through the selection of a metal gate stack with suitable effective WF for one semiconductor device to be included on a chip. Then, an ion implantation, with a dopant such as F, can be selectively performed to achieve proper Vt for other semiconductor devices on the chip.