The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Dec. 29, 2005
Applicants:

Michel Puech, Metz-Tessy, FR;

Martial Chabloz, Urayasu, JP;

Inventors:

Michel Puech, Metz-Tessy, FR;

Martial Chabloz, Urayasu, JP;

Assignee:

Alcatel, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 14/00 (2006.01); C25B 11/00 (2006.01); H01L 21/425 (2006.01); B44C 1/22 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device for fabricating a mask by plasma etching a semiconductor substrate comprises a semiconductor substrate part of the area whereof is partially covered by a mask for protecting at least one area that must not be etched and for exposing at least one area including a pattern to be etched, a support for the substrate and means for generating a plasma in the form of a flow of ions toward the substrate. According to the invention the device further comprises means for confining the ions, including a conductive material screen disposed over the substrate and along the limit between the pattern area to be etched and the area not to be etched.


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