The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Dec. 19, 2008
Joon-min Park, Seoul, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Hui-kwon Seo, Suwon-si, KR;
Joon-Min Park, Seoul, KR;
Kwang-Jin Lee, Hwaseong-si, KR;
Du-Eung Kim, Yongin-si, KR;
Woo-Yeong Cho, Suwon-si, KR;
Hui-Kwon Seo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided are a nonvolatile memory and related method of programming same. The nonvolatile memory includes a memory cell array with a plurality of nonvolatile memory cells and a write circuit. The write circuit is configured to write first logic state data to a first group of memory cells during a first program operation using a first internally generated step-up voltage, and second logic state data to a second group of memory cells during a second program operation using an externally supplied step-up voltage.