The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Apr. 28, 2009
Yuankai Zheng, Bloomington, MN (US);
Zheng Gao, San Jose, CA (US);
Wonjoon Jung, Bloomington, MN (US);
Xuebing Feng, Chanhassen, MN (US);
Xiaohua Lou, Bloomington, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Zheng Gao, San Jose, CA (US);
Wonjoon Jung, Bloomington, MN (US);
Xuebing Feng, Chanhassen, MN (US);
Xiaohua Lou, Bloomington, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Seagate Technology, Scotts Valley, CA (US);
Abstract
A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.