The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Feb. 19, 2009
Applicant:

Tsuyoshi Eda, Kanagawa, JP;

Inventor:

Tsuyoshi Eda, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a semiconductor device for which thermal stress at mounting is reduced and a reduction in reliability with regard to moisture absorption is prevented. The semiconductor device includes a uppermost metal layer, a solder bump, metalsandwhich connect an uppermost metal layerand the solder bump, and, a polyimide multilayerhaving formed therein an openingin which the metalsandare provided. The polyimide multilayerincludes a first polyimide layerA and a second polyimide layerB formed on the first polyimide layerA. The second polyimide layerB is softer than the first polyimide layerA. A thermal stress at mounting is reduced by the second polyimide layerB. Since the first polyimide layerA has a higher strength than the second polyimide layerB, even if cracking occurs in the second polyimide layerB, the cracks are prevented from developing in the first polyimide layerA.


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