The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jun. 25, 2010
Masayuki Kuroda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Masayuki Kuroda, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type AlGaN layer, a sapphire substrate, and a buffer layer. A main surface of the n-type AlGaN layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type AlGaN layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.