The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Aug. 26, 2008
Yoshiki Maehara, Ashigarakami-gun, JP;
Takashi Goto, Ashigarakami-gun, JP;
Kiyohiko Tsutsumi, Minami-Ashigara, JP;
Kyohei Ogawa, Minami-Ashigara, JP;
Takashi Komiyama, Ashigarakami, JP;
Takeshi Senga, Minami-Ashigara, JP;
Takehiro Kasahara, Minami-Ashigara, JP;
Yoshiki Maehara, Ashigarakami-gun, JP;
Takashi Goto, Ashigarakami-gun, JP;
Kiyohiko Tsutsumi, Minami-Ashigara, JP;
Kyohei Ogawa, Minami-Ashigara, JP;
Takashi Komiyama, Ashigarakami, JP;
Takeshi Senga, Minami-Ashigara, JP;
Takehiro Kasahara, Minami-Ashigara, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.