The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 02, 2008
Praveen Muraleedharan Shenoy, Wilkes Barre, PA (US);
Praveen Muraleedharan Shenoy, Wilkes Barre, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
An accumulation-mode field effect transistor includes a drift region of a first conductivity type, channel regions of the first conductivity type over and in contact with the drift region, and gate trenches having sidewalls abutting the channel regions. The gate trenches extend into and terminate within the drift region. The transistor further includes a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions. The first plurality of silicon regions extend into the drift region and form P-N junctions with the drift region along bottoms of the first plurality of silicon regions.