The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 21, 2004
Kazuhiko Matsumoto, Tsukuba, JP;
Koichi Mukasa, Sapporo, JP;
Atsushi Ishii, Sapporo, JP;
Seiji Takeda, Sapporo, JP;
Makoto Sawamura, Sapporo, JP;
Agus Subagyo, Sapporo, JP;
Hirotaka Hosoi, Sapporo, JP;
Kazuhisa Sueoka, Sapporo, JP;
Hiroshi Kida, Sapporo, JP;
Yoshihiro Sakoda, Sapporo, JP;
Kazuhiko Matsumoto, Tsukuba, JP;
Koichi Mukasa, Sapporo, JP;
Atsushi Ishii, Sapporo, JP;
Seiji Takeda, Sapporo, JP;
Makoto Sawamura, Sapporo, JP;
Agus Subagyo, Sapporo, JP;
Hirotaka Hosoi, Sapporo, JP;
Kazuhisa Sueoka, Sapporo, JP;
Hiroshi Kida, Sapporo, JP;
Yoshihiro Sakoda, Sapporo, JP;
Japan Science and Technology Agency, Kawaguchi-shi, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile