The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Mar. 31, 2008
Umesh K. Mishra, Montecito, CA (US);
Yi Pei, Goleta, CA (US);
Siddharth Rajan, Goleta, CA (US);
Man Hoi Wong, Goleta, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Yi Pei, Goleta, CA (US);
Siddharth Rajan, Goleta, CA (US);
Man Hoi Wong, Goleta, CA (US);
The Regents of the University of Califonia, Oakland, CA (US);
Abstract
A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.