The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7935985 B1

PDF
Full Text
Expired
Date of Patent:
May. 03, 2011

Filed:

Mar. 31, 2008
Applicants:

Umesh K. Mishra, Montecito, CA (US);

Yi Pei, Goleta, CA (US);

Siddharth Rajan, Goleta, CA (US);

Man Hoi Wong, Goleta, CA (US);

Inventors:

Umesh K. Mishra, Montecito, CA (US);

Yi Pei, Goleta, CA (US);

Siddharth Rajan, Goleta, CA (US);

Man Hoi Wong, Goleta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.


Find Patent Forward Citations

Mishra, Umesh. (2011). N-face high electron mobility transistors with low buffer leakage and low parasitic resistance (U.S. Patent No. 7935985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7935985

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…