The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jul. 25, 2007
Yasunobu Saito, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 kΩ/cm or more.