The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jan. 18, 2006
Pierre Jean Ribeyron, Saint Ismier, FR;
Claude Jaussaud, Meylan, FR;
Pere Roca I. Cabarrocas, Villebon sur Yvette, FR;
Jerome Damon-lacoste, Antony, FR;
Pierre Jean Ribeyron, Saint Ismier, FR;
Claude Jaussaud, Meylan, FR;
Pere Roca I. Cabarrocas, Villebon sur Yvette, FR;
Jerome Damon-Lacoste, Antony, FR;
Abstract
A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.