The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Oct. 19, 2007
Sang Yoon Lee, Seoul, KR;
Alan J. Heeger, Santa Barbara, CA (US);
Kwang Hee Lee, Goleta, CA (US);
Shinuk Cho, Goleta, CA (US);
Sang Yoon Lee, Seoul, KR;
Alan J. Heeger, Santa Barbara, CA (US);
Kwang Hee Lee, Goleta, CA (US);
Shinuk Cho, Goleta, CA (US);
Samsung Electronics Co., Ltd., Gyeonngi-do, KR;
Abstract
Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved.