The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Feb. 05, 2010
Stephen Bedell, Yorktown Heights, NY (US);
Keith Fogel, Yorktown Heights, NY (US);
Daniel Inns, Chester Hill, AU;
Jeehwan Kim, Yorktown Heights, NY (US);
Devendra Sadana, Yorktown Heights, NY (US);
James Vichiconti, Peekskill, NY (US);
Stephen Bedell, Yorktown Heights, NY (US);
Keith Fogel, Yorktown Heights, NY (US);
Daniel Inns, Chester Hill, AU;
Jeehwan Kim, Yorktown Heights, NY (US);
Devendra Sadana, Yorktown Heights, NY (US);
James Vichiconti, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.