The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Aug. 06, 2008
John M. Aitken, South Burlington, VT (US);
Ethan H. Cannon, Essex Junction, VT (US);
John M. Aitken, South Burlington, VT (US);
Ethan H. Cannon, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for fabricating a semiconductor device and more particularly to a method of manufacturing a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The method includes removing a substrate from an SOI wafer and selectively removing a buried oxide layer formed as a layer between the SOI wafer and active regions of a device. The method further comprises selectively removing isolation oxide formed between the active regions, and replacing the removed buried oxide layer and the isolation oxide with radiation hardened insulators.