The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Apr. 09, 2007
Jonathan K. Abrokwah, Chandler, AZ (US);
Keri L. Costello, Chandler, AZ (US);
James G. Cotronakis, Chandler, AZ (US);
Terry K. Daly, Gilbert, AZ (US);
Jason R. Fender, Chandler, AZ (US);
Adolfo G. Reyes, Tempe, AZ (US);
Jonathan K. Abrokwah, Chandler, AZ (US);
Keri L. Costello, Chandler, AZ (US);
James G. Cotronakis, Chandler, AZ (US);
Terry K. Daly, Gilbert, AZ (US);
Jason R. Fender, Chandler, AZ (US);
Adolfo G. Reyes, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) (), is provided. An insulating dielectric layer () having a thickness () of at least 4 microns is formed over a silicon substrate (). At least one passive electronic component () is formed over the insulating dielectric layer ().