The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Oct. 26, 2010
Yasuhiro Shimamoto, Tokorozawa, JP;
Digh Hisamoto, Kokubunji, JP;
Tetsuya Ishimaru, Tachikawa, JP;
Shinichiro Kimura, Kunitachi, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Digh Hisamoto, Kokubunji, JP;
Tetsuya Ishimaru, Tachikawa, JP;
Shinichiro Kimura, Kunitachi, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
Performance and reliability of a semiconductor device including a non-volatile memory are improved. A memory cell of the non-volatile memory includes, over an upper portion of a semiconductor substrate, a select gate electrode formed via a first dielectric film and a memory gate electrode formed via a second dielectric film formed of an ONO multilayered film having a charge storing function. The first dielectric film functions as a gate dielectric film, and includes a third dielectric film made of silicon oxide or silicon oxynitride and a metal-element-containing layer made of a metal oxide or a metal silicate formed between the select gate electrode and the third dielectric film. A semiconductor region positioned under the memory gate electrode and the second dielectric film has a charge density of impurities lower than that of a semiconductor region positioned under the select gate electrode and the first dielectric film.