The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 14, 2008
Chang Ming LI, Singapore, SG;
Mary Bee Eng Chan, Singapore, SG;
Jun Zhang, Singapore, SG;
Nanyang Technological University, Singapore, SG;
Abstract
A method of fabricating an organic field effect transistor (OFET) includes forming at least one OFET structure by ultraviolet (UV) transfer embossing printing, where, in an example embodiment, the method includes providing ink material on at least part of a patterned surface of a mold, where the moldis then contacted on a coating of ultraviolet (UV) curable resin on a substrate so as to insert at least part of the ink material into the resin, the resin is then irradiated with UV light, and the mold is separated from the resin so as to transfer the ink material onto the substrate to form at least one OFET structure.