The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Nov. 25, 2008
Applicants:

Yoshiaki Kitano, Kanagawa, JP;

Hideshi Abe, Kanagawa, JP;

Jun Kuroiwa, Kanagawa, JP;

Kiyoshi Hirata, Kanagawa, JP;

Hiroaki Ohki, Kanagawa, JP;

Nobuhiro Karasawa, Kanagawa, JP;

Ritsuo Takizawa, Tokyo, JP;

Mitsuru Yamashita, Kanagawa, JP;

Mitsuru Sato, Kanagawa, JP;

Katsunori Kokubun, Kanagawa, JP;

Inventors:

Yoshiaki Kitano, Kanagawa, JP;

Hideshi Abe, Kanagawa, JP;

Jun Kuroiwa, Kanagawa, JP;

Kiyoshi Hirata, Kanagawa, JP;

Hiroaki Ohki, Kanagawa, JP;

Nobuhiro Karasawa, Kanagawa, JP;

Ritsuo Takizawa, Tokyo, JP;

Mitsuru Yamashita, Kanagawa, JP;

Mitsuru Sato, Kanagawa, JP;

Katsunori Kokubun, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
Abstract

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.


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